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saphhire

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Sapphire(Al2O3) is consists of 3 oxygen atoms and 2 aluminium atoms by covalent bond, it is hexagonal lattice structure. Sapphire possesses unique properties of excellent optical, mechanical, chemical stability with high intensity, high hardness.
It is able to work under the temperature of 2000 centigrade, which is applied in infrared military devices, high intensity laser lens and photo-mask material. The unique lattice structure, mechanical and thermal property makes sapphire the major material for photoelectric devices. Usually, sapphire substrate is used for growing GaN based material and device epitaxial layer. Sapphire substrate has several advantages, first, growth technology is mature, device performs well, second, high stability enables the use under high-temperature growth, at last, it can be processed and cleaned easily because of its high mechanical intensity, which is the reason why it is applied as substrate in many process.

Properties of sapphire crystal

http://www.sjllaser.com/upfile/2012021722074417433.jpg

Contents

Sapphire/Ruby is five times more abrasive resistant than carbide, it is zero porosity, high temperature tolerant, extremely chemical resistant (almost inert), and extremely hard (next to diamond). Sapphire and Ruby will stand up to even harsh environments without appreciable wear or corrosion of the orifice.

Typical Applications:

Ultra-high Pressure Sapphire Water Jet Orifices

Gas/liquid control valves

Analytical Instruments

Flow Meters

Ink Jet-printing

Pneumatic Regulators

cell counting and medical instrumentation


 



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LBS002

LBS011

sapphire004

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sapphire001

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Orifices

Size

OD

H

ID

h

α

0.60 ~10.00

0.05 ~ 3.00

0.04 ~ 0.18

0.05 ~ 1.50

14°~120°

Tolerance

0.006 ~ 0.03

0.02 ~ 0.10

0.004

0.01 ~ 0.08

±3°

Surface roughness

The surface for application: Rz0.05---Rz0.20



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